Hitachi-ABB_ IGCT Semiconductors for Reliable High Power Applications_SLIDES.pdf

上传人:Jason- 文档编号:100411263 上传时间:2022-02-19 格式:PDF 页数:25 大小:5.38MB
下载 相关 举报
Hitachi-ABB_ IGCT Semiconductors for Reliable High Power Applications_SLIDES.pdf_第1页
第1页 / 共25页
Hitachi-ABB_ IGCT Semiconductors for Reliable High Power Applications_SLIDES.pdf_第2页
第2页 / 共25页
Hitachi-ABB_ IGCT Semiconductors for Reliable High Power Applications_SLIDES.pdf_第3页
第3页 / 共25页
Hitachi-ABB_ IGCT Semiconductors for Reliable High Power Applications_SLIDES.pdf_第4页
第4页 / 共25页
Hitachi-ABB_ IGCT Semiconductors for Reliable High Power Applications_SLIDES.pdf_第5页
第5页 / 共25页
亲,该文档总共25页,到这儿已超出免费预览范围,如果喜欢就下载吧!
资源描述
HITACHI ABB POWER GRIDS Hitachi ABB Power Grids 2020. All rights reserved New template For use by RRD 2020-07-06 POWERING GOOD FOR SUSTAINABLE ENERGY IGCT Semiconductors for Reliable, High Power Applications such as Off-Shore Wind, Rail- Intertie or Medium Voltage Drives Thomas Stiasny - Senior Principal Engineer Bipolar Technology Christian Winter - Global Product Manager, BiPolar Semiconductor devices Hitachi ABB Power Grids Ltd. 2020. All rights reserved. HITACHI ABB POWER GRIDS 2 How does an IGCT work Different types of IGCTs IGCT design reliability / power handling capability Content Hitachi ABB Power Grids Ltd. 2020. All rights reserved. HITACHI ABB POWER GRIDS 3 IGCT phase: ThyristorStructureCurrent / voltage wave form Conduction Conducting state of IGCT Thyristor mode active Electron emission from cathode Hole emission from anode Very low on-state voltage drop The IGCT principle n- p+ n Cathode VGU Gate L Anode + - n+ p S Hitachi ABB Power Grids Ltd. 2020. All rights reserved. HITACHI ABB POWER GRIDS 4 IGCT phase: ThyristorStructureCurrent / voltage wave form Current commutation Anode current commutates from Cathode to Gate Commutation dIGate/dt = VGU/L Low inductive Gate circuit necessary The IGCT principle n- p+ n Cathode Gate L Anode + - n+ VGU p S Hitachi ABB Power Grids Ltd. 2020. All rights reserved. HITACHI ABB POWER GRIDS 5 IGCT phase: TransitorStructureCurrent / voltage wave form Anode current commutated to Gate Transistor mode activated Cathode fully bypassed though Gate Unit Thyristor converted to open base pnp Transistor Hard drive condition: commutation before VAK rises Commutation time IT L/ VGU The IGCT principle n- p+ n Cathode Gate L Anode + - n+ VGU p S ThyristorTransistor Hitachi ABB Power Grids Ltd. 2020. All rights reserved. HITACHI ABB POWER GRIDS 6 IGCT phase: TransitorStructureCurrent / voltage wave form Turn-off as Transistor Extraction of Charge carriers though Anode and Gate Turn-off dI/dt defined by device Tail current participates to dynamic losses The IGCT principle n- p+ n Cathode Gate L Anode + - n+ VGU p S ThyristorTransistor Hitachi ABB Power Grids Ltd. 2020. All rights reserved. HITACHI ABB POWER GRIDS 7 IGCT phase: TransitorStructureCurrent / voltage wave form Blocking device Transistor mode active High dV/dt immunity through low inductive Gate Cathode coupling (for powered Gate unit) The IGCT principle n- p+ n Cathode Gate L Anode + - n+ VGU p n- S ThyristorTransistor Hitachi ABB Power Grids Ltd. 2020. All rights reserved. HITACHI ABB POWER GRIDS 8 IGCT Gate circuit requirements The Thyristor is a current driven device IGCT operation requires low inductive coupling of gate unit and power semiconductor Distributed gate on silicon wafer Low inductive package for power semiconductor Integration of power semiconductor and gate unit Low inductive gate unit IGCT - Integration of Gate unit and power semiconductor Gate unit IGCT Wafer Power semiconductor In low inductive package Hitachi ABB Power Grids Ltd. 2020. All rights reserved. HITACHI ABB POWER GRIDS 9 Asymmetric IGCTReverse conducting IGCTReverse blocking IGCT Full forward blocking capability Reverse blocking capability 20V Typically used with antiparallel diode Used in voltage source inverters Full forward blocking capability Integrated antiparallel diode Used in voltage source inverters Full forward blocking capability Full reverse blocking capability Typically used in current source inverters, breakers Different types of IGCTs n- p+ GCT cathode GCT anode n p gate n+n+n+n+n+n+n+n+n+n+n+ n- p+n+ p GCT cathodeseparation region GCT anode diode anode diode cathode n p p n+n+n+n+n+n+ gate GCT anode p+ n- GCT cathode p gate n+n+n+n+n+n+n+n+n+n+n+ p Hitachi ABB Power Grids Ltd. 2020. All rights reserved. HITACHI ABB POWER GRIDS 10 Typical IGCT circuitTypical IGBT circuit Turn-on dI/dt limited by switch no passive components turn-on losses in S1-6 no fault current limitation circuit is suitable for Transistors only No dI/dt control by switch possible extra components (Clamp Network) no significant turn-on losses in devices immitted fault current circuit is mandatory for IGCTs (optional for transistors) IGCT IGBT circuit design R L LSDClamp CClamp Clamp Network S1D1 S2D2 S3D3 S4D4 S5D5 S6D6 VR S1D1 S2D2 S3D3 S4D4 S5D5 S6D6 VR Hitachi ABB Power Grids Ltd. 2020. All rights reserved. HITACHI ABB POWER GRIDS 11 Design Reliability Power handling Lowest On-state losses possible Optimal ratio active area to edge termination Low part count of power semiconductor High ruggedness against load cycling aging Double side cooling for superior thermal management Failure mode: Short circuit, optimal for applications with redundancy Power semiconductor well protected against environmental influences (e.g. humidity) High field reliability of gate unit Thyristor structure Monolithic silicon design Pressure contact design (no bond wire or solder layer) Hermetic ceramic housing Gate unit with redundancy in turn-off circuit IGCT design relia
展开阅读全文
相关资源
相关搜索

当前位置:首页 > 其他

版权所有:www.WDFXW.net 

鲁ICP备09066343号-25 

QQ: 200681278 或 335718200