MIL-STD-883E.pdf

k Thedocumentationandprocess conversionmeasuresnecessafyto complywiththis revlslonshallbe MIL-STD-883E 31 DECEMBER1996 SUPERSEDING MI L-STD-883D 15 NOVEMBER1991 -. DEPARTMENTOF DEFENSE TEST METHODSTANDARD MICROCIRCUITS AMSC N/AFSC5962 DISTRIBUTIONSTATEMENTA.Approvedfor publicrelease;distributionis unlimited. .S -. MIL-STD-B83E FOREWORO 1. This military standard is approved for use by all Departments and Agencies of the Department of Defense. . 2. Beneficial camments (recommendations, additions,deletions) and any pertinent data which may be of use in improving this document should be addressed toOefense Supply Center Columbus, P.O. Box 3990, Columbus, OH 4321 S-5000, by using the self-addressed Standardization Document Improvement Proposal (DO Form 1426) appearing at the end of this document or by letter. MIL-STO-S83E CONTENTS 1.Orientation of noncylindricalmicroelectronicdevices to direction of applied foCm. 10 2.Orientation of cylindrical microelectronicdevice to direction of appfied form . 11 MIL-STD-683E TEST METHODS METHOD NO.ENVIRONMENTAL TESTS 1001 1002 1003 1004.7 1005.8 1006 1007 1006.2 1009.8 1010.7 1011.9 1012.1 1013 1014,10 1015,9 1016 1017.2 1018.2 1019.4 1020.1 1021.2 1022 1023.2 1030.1 1031 1032.1 i 033 1034 2001.2 2002.3 2003.7 2004.5 2005.2 2006.1 2007,2 2006.1 2009.9 2010.10 2011.7 2012.7 2013.1 2014 . 2015.11 2016 I 2017.7 2018,3 I 2019.5 2020.7 Bammetdc pressure, reduced (altitude operation) Immersion Insulation resistance Moisture resistance Steady state hfe Intermittent hfe Agree tife Stabilization bake Salt atmosphere (corrosion) Temperature cycling Thermal shock Thermal characteristics Dew point Seal Bum-in test Life/reliabilitycharacterization tests Neutron irradiation Internal water-vapor content Ionizing radiation (total dose) test procedure Oose rate induced Iatchup test procedure Dose rate upset testing of digital microcircuits Mosfet threshold voltage Dose rate response of linear microcircuits Presea! bum-in Thin film cmrrosiontest Package induced soft error test procedure (due to alpha particles) Endurance life test Oie penetrant test (for plastic devices) MECHANICAL TESTS Constant acceleration Mechanical shock Solderability Lead integrity Wbration fatigue vibration noise Vibration, variable frequency Visual and mechanical External visual Internal visual (monolithic) Bond strength (destructive bond pulltest) Radiography Internal visual inspectionfor DPA Internal visual and mechanical Resistance to solvents Physical dimensions Internal visual (hybrid) Scanning electron microscope (SEM) inspectionof metaltization Die shear strength Particle impact noise detection test iv MIL-STO-B83E TEST M!3HOOS METHOO NO. 2021.3 2022.2 2023.5 2024.2 2025.4 2026 2027.2 2026.4 2029 2030 2031.1 2032.1 2035 3001.1 3002.1 3003.1 3004.1 3005.1 3006.1 3007.1 3006.1 3009.1 3010.1 3011.1 3012.1 3013.1 3014 3015.7 3016 3017 3016 3019.1 3020 3021 3022 3023 3024 MECHANICAL TESTS Glassivation layer integrity Wetting balance so!derability Nondestmctive bond Pull Lid torque for glass-frit-sealed packages Adhesion of lead finish Random vibration Substrate attach strength Pin grid package destructive lead pulltest Ceramic chip carrier bond strength Ultrasonic inspection of die attach Flip chip pull-offtest Vtsual inspection of passive elements Ultrasonic inspection ofTAB bonds ELECTRICAL TESTS (OIGITAL) Drive source, dynamic Load conditions Delay measurements Transition time measurements Power supply current High level output voltage Low level outputvoltage Breakdown voltage, inputor output Input current, low level Input current, high level Output short circuitcurrent Terminal capacitance Noise margin measurements fordigital microelectronicdevices Functional testing Electrostatic discharge sensitivitydassirication Activation time verification Micoaelectr0nic5package digital signal transmission Crosstalk measurements for digital microelectronicdevice packages Ground and power supply impedances measurements for digital microelectronics device packages High impedance (off-state) low-level output leakage current tUgh impedance (off-state) high-level output kakage current Input clamp voltage Static latch-up measurements for digitalCMOS microelectronicdevices Simultaneous switchingnoise measurements for digital microelectronicdevices ELECTRICAL TESTS (LINEAR) 4001.1Input offset voltage and current and bias current 4002.1Phase margin and slew rate measurements 4003.1Common mode inputvoltage range Common mode rejection ratio Supply voltage rejection ratio 4004.1Open loop performance 4005.1Output performance 4006.1Power gain and noise figure 4007Automatic gain control range MlL-STD-6.93E METHOD NO. 5001 5002.1 5003 5004.10 5005.13 5006 5007.6 5008.8 5009.1 5010.3 5011.4 5012.1 5013 TEST METHOOS TEST PROCEDURES Parameter mean value control Parameter distributioncontrol Failure analysis pmcedunssfor microcircuits Screening procedures Qualification and quality conformance procedures Limittesting Wafer lot acceptanm Test pr