MIL-PRF-19500.391L-2008.pdf

MIL-PRF-19500/391L 15 January 2008 SUPERSEDING MIL-PRF-19500/391K 26 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N3019, 2N3019S, 2N3057A, 2N3700, AND 2N3700UB, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA, JANHCB, JANKCA, JANKCB JANKCBM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device type 2N3700. Provisions for radiation hardness assurance (RHA) to three radiation levels is provided for JANS, JANHC, and JANKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G” and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. * 1.2 Physical dimensions. See figure 1, 2N3019 (TO-5) and 2N3019S (similar to TO-39), figure 2, 2N3057A (TO-46), figure 3, 2N3700 (TO-18), figure 4, 2N3700UB, figure 5, JANHCA2N3700 and JANKCA2N3700 and figure 6, JANHCB2N3700 and JANKCB2N3700. * 1.3 Maximum ratings. Unless otherwise specified, TA = +25C. IC VCBO VEBO VCEO TJ and TSTG A dc 1 V dc 140 V dc 7 V dc 80 C -65 to +200 AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database. at http:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 15 April 2008. Source: http:/ - Downloaded: 2008-04-30T02:17Z Check the source to verify that this is the current version before use. MIL-PRF-19500/391L 2 * 1.3 Maximum ratings. Unless otherwise specified, TA = +25C. - Continued. Types PT TA = +25C (1) (2) PT TC = +25C (1) (2) PT TSP(IS) = +25C (1) (2) RJA (2) (3) (4) RJC (2) (3) RJSP(IS) (2) (3) W W W C/W C/W C/W 2N3019 0.800 5 N/A 195 30 N/A 2N3019S 0.800 5 N/A 195 30 N/A 2N3057A 0.500 1.8 N/A 325 80 N/A 2N3700 0.500 1 N/A 325 150 N/A 2N3700UB 0.500 N/A 1.5 325 N/A 90 (1) For derating, see figures 7, 8, 9, 10, 11, and 12. (2) See 3.3. (3) For thermal curves, see figures 13, 14, 15, 16, 17, 18, and 19. (4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 7 and 11 for the UB package and use RJA. * 1.4 Primary electrical characteristics. Limits hFE1 hFE2 hFE3 (1) hFE4 (1) VCE = 10 V dc IC = 150 mA dc VCE = 10 V dc IC = 0.1 mA dc VCE = 10 V dc IC = 10 mA dc VCE = 10 V dc IC = 500 mA dc Min 100 50 90 50 Max 300 200 200 Types Limit hFE5 (1) VCE = 10 V dc IC = 1 A dc |hfe| f = 20 MHz VCE = 10 V dc IC = 50 mA dc Cobo 100 kHz f 1 MHz VCB = 10 V dc IE = 0 2N3019, 2N3019S 2N3057A, 2N3700 2N3700UB pF Min 15 5 Max 20 12 Types Limits VCE(sat)1 (1) IC = 150 mA dc IB = 15 mA dc VCE(sat)2 (1) IC = 500 mA dc IB = 50 mA dc VBE(sat) (1) IC = 150 mA dc IB = 15 mA dc 2N3019, 2N3019S 2N3057A, 2N3700 2N3700UB V dc V dc V dc Min Max 0.2 0.5 1.1 (1) Pulsed, see 4.5.1. Source: http:/ - Downloaded: 2008-04-30T02:17Z Check the source to verify that this is the current version before use. MIL-PRF-19500/391L 3 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12. For S suffix devices, dimension LL is 0.500 (12.70 mm) minimum, 0.750 (19.05 mm) maximum. 13. S suffix devices, dimension LL is 0.50 (12.70 mm) minimum, 0.75 (19.05 mm) maximum. 14. L suffix devices, dimension LL is 1.500 (38.10 mm) minimum, 1.750 (44.45 mm) maximum. 13. 15. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensio